BTS282ZE3180A

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Overview of BTS282ZE3180A

Part NumberBTS282ZE3180A
ManufacturerInfineon Technologies
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload BTS282ZE3180A Datasheet PDFPDF Icon
Price for BTS282ZE3180A

Specification of BTS282ZE3180A

Status
Active
Series
TEMPFET®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
49 V
Current - Continuous Drain (Id) @ 25C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
2V @ 240A
Gate Charge (Qg) (Max) @ Vgs
232 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-7-1
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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