BUK652R6-40C,127

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Overview of BUK652R6-40C,127

Part NumberBUK652R6-40C,127
ManufacturerNXP Semiconductors
DescriptionMOSFET N-CH 40V 120A TO220AB
DatasheetsDownload BUK652R6-40C,127 Datasheet PDFPDF Icon
Price for BUK652R6-40C,127

Specification of BUK652R6-40C,127

Status
Obsolete
Series
TrenchMOS™
Package
Tube,Tube
Supplier
Rochester Electronics, LLC,NXP USA Inc.
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
199 nC @ 10 V
Vgs (Max)
16V
Input Capacitance (Ciss) (Max) @ Vds
11334 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
263W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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