CC-C2-B15-0322

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Overview of CC-C2-B15-0322

Part NumberCC-C2-B15-0322
ManufacturerCoolCAD
DescriptionSiC Power MOSFET 1200V 12A
DatasheetsDownload CC-C2-B15-0322 Datasheet PDFPDF Icon
Price for CC-C2-B15-0322

Specification of CC-C2-B15-0322

Status
Active
Package
Bulk
Supplier
Electroverge
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
135mOhm @ 10A, 15V
Vgs(th) (Max) @ Id
3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 15 V
Vgs (Max)
+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds
1810 pF @ 200 V
FET Feature
Standard
Power Dissipation (Max)
100W (Tc)
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-4

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