CDBJSC8650-G

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Overview of CDBJSC8650-G

Part NumberCDBJSC8650-G
ManufacturerComchip Technology
DescriptionDIODE SIL CARB 650V 8A TO220-2
DatasheetsDownload CDBJSC8650-G Datasheet PDFPDF Icon
Price for CDBJSC8650-G

Specification of CDBJSC8650-G

Status
Active
Package
Tube
Supplier
Comchip Technology
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
100 A @ 650 V
Capacitance @ Vr, F
560pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2
Operating Temperature - Junction
-55C ~ 175C

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