CP375-CWDM3011N-CT

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Overview of CP375-CWDM3011N-CT

Part NumberCP375-CWDM3011N-CT
ManufacturerCentral Semiconductor
DescriptionMOSFET N-CH 11A 30V BARE DIE
DatasheetsDownload CP375-CWDM3011N-CT Datasheet PDFPDF Icon
Price for CP375-CWDM3011N-CT

Specification of CP375-CWDM3011N-CT

Status
Obsolete
Package
Tray
Supplier
Central Semiconductor Corp
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
6.3 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
860 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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