CP798X-CPDM302PH-WN

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Overview of CP798X-CPDM302PH-WN

Part NumberCP798X-CPDM302PH-WN
ManufacturerCentral Semiconductor
DescriptionMOSFET P-CH 30V 2.4A DIE
DatasheetsDownload CP798X-CPDM302PH-WN Datasheet PDFPDF Icon
Price for CP798X-CPDM302PH-WN

Specification of CP798X-CPDM302PH-WN

Status
Active
Package
Tray
Supplier
Central Semiconductor Corp
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
91mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id
1.4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
9.6 nC @ 5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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