CP802-CWDM3011P-WN

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Overview of CP802-CWDM3011P-WN

Part NumberCP802-CWDM3011P-WN
ManufacturerCentral Semiconductor
DescriptionMOSFET P-CH 30V 11A DIE
DatasheetsDownload CP802-CWDM3011P-WN Datasheet PDFPDF Icon
Price for CP802-CWDM3011P-WN

Specification of CP802-CWDM3011P-WN

Status
Active
Package
Bulk
Supplier
Central Semiconductor Corp
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3100 pF @ 8 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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