CSD16342Q5AT

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Overview of CSD16342Q5AT

Part NumberCSD16342Q5AT
ManufacturerTexas Instruments
DescriptionPROTOTYPE
DatasheetsDownload CSD16342Q5AT Datasheet PDFPDF Icon
Price for CSD16342Q5AT

Specification of CSD16342Q5AT

Status
Active
Series
NexFET™
Package
Bulk
Supplier
Texas Instruments
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25C
21A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 8V
Rds On (Max) @ Id, Vgs
4.7mOhm @ 20A, 8V
Vgs(th) (Max) @ Id
1.1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
7.1 nC @ 4.5 V
Vgs (Max)
+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 12.5 V
FET Feature
-
Power Dissipation (Max)
3W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-VSON (5x6)
Package / Case
8-PowerTDFN

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