CSD17313Q2T

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Overview of CSD17313Q2T

Part NumberCSD17313Q2T
ManufacturerTexas Instruments
DescriptionMOSFET N-CH 30V 5A 6WSON
DatasheetsDownload CSD17313Q2T Datasheet PDFPDF Icon
Price for CSD17313Q2T

Specification of CSD17313Q2T

Status
Active
Series
NexFET™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Texas Instruments
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
3V, 8V
Rds On (Max) @ Id, Vgs
30mOhm @ 4A, 8V
Vgs(th) (Max) @ Id
1.8V @ 250A
Gate Charge (Qg) (Max) @ Vgs
2.7 nC @ 4.5 V
Vgs (Max)
+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds
340 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 17W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WSON (2x2)
Package / Case
6-WDFN Exposed Pad

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