CSD19501KCS

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Overview of CSD19501KCS

Part NumberCSD19501KCS
ManufacturerTexas Instruments
DescriptionMOSFET N-CH 80V 100A TO220-3
DatasheetsDownload CSD19501KCS Datasheet PDFPDF Icon
Price for CSD19501KCS

Specification of CSD19501KCS

Status
Active
Series
NexFET™
Package
Bulk,Tube
Supplier
Rochester Electronics, LLC,Texas Instruments
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
6.6mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
3.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3980 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
217W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3

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