CSD19538Q2T

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Overview of CSD19538Q2T

Part NumberCSD19538Q2T
ManufacturerTexas Instruments
DescriptionMOSFET N-CH 100V 13.1A 6WSON
DatasheetsDownload CSD19538Q2T Datasheet PDFPDF Icon
Price for CSD19538Q2T

Specification of CSD19538Q2T

Status
Active
Series
NexFET™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Texas Instruments
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
59mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
3.8V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5.6 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
454 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 20.2W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WSON (2x2)
Package / Case
6-WDFN Exposed Pad

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