CSD25304W1015T

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Overview of CSD25304W1015T

Part NumberCSD25304W1015T
ManufacturerTexas Instruments
DescriptionMOSFET P-CH 20V 3A 6DSBGA
DatasheetsDownload CSD25304W1015T Datasheet PDFPDF Icon
Price for CSD25304W1015T

Specification of CSD25304W1015T

Status
Active
Series
NexFET™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Texas Instruments
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
32.5mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.15V @ 250A
Gate Charge (Qg) (Max) @ Vgs
4.4 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
595 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-DSBGA (1x1.5)
Package / Case
6-UFBGA, DSBGA

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