CSD87330Q3DT

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Overview of CSD87330Q3DT

Part NumberCSD87330Q3DT
ManufacturerTexas Instruments
DescriptionPROTOTYPE
DatasheetsDownload CSD87330Q3DT Datasheet PDFPDF Icon
Price for CSD87330Q3DT

Specification of CSD87330Q3DT

Status
Active
Series
NexFET™
Package
Bulk
Supplier
Texas Instruments
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Half Bridge)
FET Feature
Standard
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
20A (Ta)
Rds On (Max) @ Id, Vgs
9.45mOhm @ 15A, 5V, 3.6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id
2.1V @ 250A, 1.15V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5.8nC @ 4.5V, 11.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 15V, 1632pF @ 15V
Power - Max
6W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerLDFN
Supplier Device Package
8-LSON (3.3x3.3)

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