DF11MR12W1M1B11BOMA1

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Overview of DF11MR12W1M1B11BOMA1

Part NumberDF11MR12W1M1B11BOMA1
ManufacturerInfineon Technologies
DescriptionMOSFET MODULE 1200V 50A
DatasheetsDownload DF11MR12W1M1B11BOMA1 Datasheet PDFPDF Icon
Price for DF11MR12W1M1B11BOMA1

Specification of DF11MR12W1M1B11BOMA1

Status
Obsolete
Package
Bulk,Tray
Supplier
Rochester Electronics, LLC,Infineon Technologies
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
50A
Rds On (Max) @ Id, Vgs
23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id
5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
125nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
3950pF @ 800V
Power - Max
20mW
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY1BM-2

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