DF17MR12W1M1HFB68BPSA1

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Overview of DF17MR12W1M1HFB68BPSA1

Part NumberDF17MR12W1M1HFB68BPSA1
ManufacturerInfineon Technologies
DescriptionLOW POWER EASY
Price for DF17MR12W1M1HFB68BPSA1

Specification of DF17MR12W1M1HFB68BPSA1

Status
Active
Series
EasyPACK™
Package
Tray
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
45A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
16.2mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5.15V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
149 nC @ 18 V
Vgs (Max)
+20V, -7V
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
20mW
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
-
Package / Case
Module

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