DF23MR12W1M1B11BOMA1

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Overview of DF23MR12W1M1B11BOMA1

Part NumberDF23MR12W1M1B11BOMA1
ManufacturerInfineon Technologies
DescriptionMOSFET MODULE 1200V 25A
DatasheetsDownload DF23MR12W1M1B11BOMA1 Datasheet PDFPDF Icon
Price for DF23MR12W1M1B11BOMA1

Specification of DF23MR12W1M1B11BOMA1

Status
Obsolete
Package
Bulk,Tray
Supplier
Rochester Electronics, LLC,Infineon Technologies
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
25A
Rds On (Max) @ Id, Vgs
45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id
5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 800V
Power - Max
20mW
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY1BM-2

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