DG636EEQ-T1-GE3

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Overview of DG636EEQ-T1-GE3

Part NumberDG636EEQ-T1-GE3
ManufacturerVishay / Siliconix
DescriptionIC SWITCH SPDT X 2 96OHM 16TSSOP
DatasheetsDownload DG636EEQ-T1-GE3 Datasheet PDFPDF Icon
Price for DG636EEQ-T1-GE3

Specification of DG636EEQ-T1-GE3

Status
Active
Package
Tape & Reel (TR)
Supplier
Vishay Siliconix
Switch Circuit
SPDT
Multiplexer/Demultiplexer Circuit
2:1
Number of Circuits
2
On-State Resistance (Max)
96Ohm
Channel-to-Channel Matching (ΔRon)
300mOhm
Voltage - Supply, Single (V+)
3V ~ 16V
Voltage - Supply, Dual (V)
3V ~ 8V
Switch Time (Ton, Toff) (Max)
46ns, 55ns
-3db Bandwidth
700MHz
Charge Injection
-0.33pC
Channel Capacitance (CS(off), CD(off))
3.7pF, 4.4pF
Current - Leakage (IS(off)) (Max)
1nA
Crosstalk
-62dB @ 1MHz
Operating Temperature
-40C ~ 125C (TA)
Mounting Type
Surface Mount
Package / Case
16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
16-TSSOP

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