DI200N10D2

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Overview of DI200N10D2

Part NumberDI200N10D2
ManufacturerDiotec Semiconductor
DescriptionMOSFET, D2PAK, 100V, 200A, 175C
DatasheetsDownload DI200N10D2 Datasheet PDFPDF Icon
Price for DI200N10D2

Specification of DI200N10D2

Status
Active
Package
Tape & Reel (TR)
Supplier
Diotec Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 120A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
262 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
16800 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
340W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AB
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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