DMN10H170SFGQ-13

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Overview of DMN10H170SFGQ-13

Part NumberDMN10H170SFGQ-13
ManufacturerDiodes Incorporated
DescriptionMOSFET N-CH 100V PWRDI3333
DatasheetsDownload DMN10H170SFGQ-13 Datasheet PDFPDF Icon
Price for DMN10H170SFGQ-13

Specification of DMN10H170SFGQ-13

Status
Active
Series
Automotive, AEC-Q101
Package
Tape & Reel (TR)
Supplier
Diodes Incorporated
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
2.9A (Ta), 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
122mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
14.9 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
870.7 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
940mW (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerDI3333-8
Package / Case
8-PowerVDFN

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