DMN2009USS-13

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Overview of DMN2009USS-13

Part NumberDMN2009USS-13
ManufacturerDiodes Incorporated
DescriptionMOSFET N-CH 20V 8SOIC
Price for DMN2009USS-13

Specification of DMN2009USS-13

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Diodes Incorporated
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
12.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
1.2V @ 250A
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
1706 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.4W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)

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