DMT10H003SPSW-13

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Overview of DMT10H003SPSW-13

Part NumberDMT10H003SPSW-13
ManufacturerDiodes Incorporated
DescriptionMOSFET BVDSS: 61V~100V POWERDI50
DatasheetsDownload DMT10H003SPSW-13 Datasheet PDFPDF Icon
Price for DMT10H003SPSW-13

Specification of DMT10H003SPSW-13

Status
Active
Package
Tape & Reel (TR)
Supplier
Diodes Incorporated
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
152A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
85 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5542 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 139W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerDI5060-8 (Type Q)
Package / Case
8-PowerTDFN

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