DMWS120H100SM4

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Overview of DMWS120H100SM4

Part NumberDMWS120H100SM4
ManufacturerDiodes Incorporated
DescriptionSIC MOSFET BVDSS: >1000V TO247-4
DatasheetsDownload DMWS120H100SM4 Datasheet PDFPDF Icon
Price for DMWS120H100SM4

Specification of DMWS120H100SM4

Status
Active
Package
Tube
Supplier
Diodes Incorporated
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
37.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 15 V
Vgs (Max)
+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds
1516 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4

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