DTD114ESTP

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Overview of DTD114ESTP

Part NumberDTD114ESTP
ManufacturerROHM Semiconductor
DescriptionTRANS PREBIAS NPN 300MW SPT
DatasheetsDownload DTD114ESTP Datasheet PDFPDF Icon
Price for DTD114ESTP

Specification of DTD114ESTP

Status
Obsolete
Package
Tape & Box (TB)
Supplier
Rohm Semiconductor
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
200 MHz
Power - Max
300 mW
Mounting Type
Through Hole
Package / Case
SC-72 Formed Leads
Supplier Device Package
SPT

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