E3M0120090J-TR

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Overview of E3M0120090J-TR

Part NumberE3M0120090J-TR
ManufacturerWolfspeed - a Cree company
DescriptionSIC, MOSFET, 120M, 900V, TO-263-
Price for E3M0120090J-TR

Specification of E3M0120090J-TR

Status
Active
Series
E
Package
Tape & Reel (TR)
Supplier
Wolfspeed, Inc.
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id
3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 15 V
Vgs (Max)
+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds
414 pF @ 600 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, DPak (7 Leads + Tab), TO-263CA

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