ECH8411-TL-E

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Overview of ECH8411-TL-E

Part NumberECH8411-TL-E
Manufactureronsemi
DescriptionMOSFET N-CH 20V 9A 8ECH
Price for ECH8411-TL-E

Specification of ECH8411-TL-E

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
16mOhm @ 4A, 4V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 4 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
1740 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.4W (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-ECH
Package / Case
8-SMD, Flat Lead

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