EM6M1T2R

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Overview of EM6M1T2R

Part NumberEM6M1T2R
ManufacturerROHM Semiconductor
DescriptionMOSFET N/P-CH 30V/20V EMT6
DatasheetsDownload EM6M1T2R Datasheet PDFPDF Icon
Price for EM6M1T2R

Specification of EM6M1T2R

Status
Not For New Designs
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V, 20V
Current - Continuous Drain (Id) @ 25C
100mA, 200mA
Rds On (Max) @ Id, Vgs
8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
13pF @ 5V
Power - Max
150mW
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
EMT6

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