EMF8T2R

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Overview of EMF8T2R

Part NumberEMF8T2R
ManufacturerROHM Semiconductor
DescriptionTRANS NPN PREBIAS/NPN 0.15W EMT6
DatasheetsDownload EMF8T2R Datasheet PDFPDF Icon
Price for EMF8T2R

Specification of EMF8T2R

Status
Not For New Designs
Package
Tape & Reel (TR)
Supplier
Rohm Semiconductor
Transistor Type
1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max)
100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
50V, 12V
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
68 @ 5mA, 5V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500A, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
250MHz, 320MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
EMT6

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