EPC2022

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Overview of EPC2022

Part NumberEPC2022
ManufacturerEPC
DescriptionGANFET N-CH 100V 90A DIE
DatasheetsDownload EPC2022 Datasheet PDFPDF Icon
Price for EPC2022

Specification of EPC2022

Status
Active
Series
eGaN®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
EPC
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
90A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

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