EPC2110ENGRT

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Overview of EPC2110ENGRT

Part NumberEPC2110ENGRT
ManufacturerEPC
DescriptionGAN TRANS 2N-CH 120V BUMPED DIE
DatasheetsDownload EPC2110ENGRT Datasheet PDFPDF Icon
Price for EPC2110ENGRT

Specification of EPC2110ENGRT

Status
Active
Series
eGaN®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
EPC
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Dual) Common Source
FET Feature
-
Drain to Source Voltage (Vdss)
120V
Current - Continuous Drain (Id) @ 25C
3.4A
Rds On (Max) @ Id, Vgs
60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id
2.5V @ 700A
Gate Charge (Qg) (Max) @ Vgs
0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
80pF @ 60V
Power - Max
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die

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