EPC7018GC

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Overview of EPC7018GC

Part NumberEPC7018GC
ManufacturerEPC Space, LLC
DescriptionGAN FET HEMT 100V 90A COTS 5UB
DatasheetsDownload EPC7018GC Datasheet PDFPDF Icon
Price for EPC7018GC

Specification of EPC7018GC

Status
Active
Series
eGaN®
Package
Bulk
Supplier
EPC Space
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
6mOhm @ 40A, 5V
Vgs(th) (Max) @ Id
2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
11.7 nC @ 5 V
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1240 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
5-SMD
Package / Case
5-SMD, No Lead

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