ES6U1T2R

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Overview of ES6U1T2R

Part NumberES6U1T2R
ManufacturerROHM Semiconductor
DescriptionMOSFET P-CH 12V 1.3A 6WEMT
DatasheetsDownload ES6U1T2R Datasheet PDFPDF Icon
Price for ES6U1T2R

Specification of ES6U1T2R

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
260mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
2.4 nC @ 4.5 V
Vgs (Max)
10V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 6 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WEMT
Package / Case
6-SMD, Flat Leads

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