F411MR12W2M1B76BOMA1

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Overview of F411MR12W2M1B76BOMA1

Part NumberF411MR12W2M1B76BOMA1
ManufacturerInfineon Technologies
DescriptionLOW POWER EASY AG-EASY2B-2
Price for F411MR12W2M1B76BOMA1

Specification of F411MR12W2M1B76BOMA1

Status
Obsolete
Series
EasyPACK™ CoolSiC™
Package
Bulk,Tray
Supplier
Rochester Electronics, LLC,Infineon Technologies
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
100A (Tj)
Rds On (Max) @ Id, Vgs
11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id
5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs
248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
7360pF @ 800V
Power - Max
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY1B-2

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