F423MR12W1M1B76BPSA1

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Overview of F423MR12W1M1B76BPSA1

Part NumberF423MR12W1M1B76BPSA1
ManufacturerInfineon Technologies
DescriptionMOSFET MODULE
DatasheetsDownload F423MR12W1M1B76BPSA1 Datasheet PDFPDF Icon
Price for F423MR12W1M1B76BPSA1

Specification of F423MR12W1M1B76BPSA1

Status
Obsolete
Series
EasyPACK™ CoolSiC™
Package
Tray
Supplier
Infineon Technologies
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
45A (Tj)
Rds On (Max) @ Id, Vgs
22.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id
5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
124nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
3680pF @ 800V
Power - Max
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY1B-2

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