FBG20N04ASH

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Overview of FBG20N04ASH

Part NumberFBG20N04ASH
ManufacturerEPC Space, LLC
DescriptionGAN FET HEMT 200V 4A 4FSMD-A
Price for FBG20N04ASH

Specification of FBG20N04ASH

Status
Active
Series
e-GaN®
Package
-
Supplier
EPC Space
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
130mOhm @ 4A, 5V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
3 nC @ 5 V
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-SMD
Package / Case
4-SMD, No Lead

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