FCB099N65S3

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Overview of FCB099N65S3

Part NumberFCB099N65S3
Manufactureronsemi
DescriptionMOSFET N-CH 650V 30A D2PAK-3
DatasheetsDownload FCB099N65S3 Datasheet PDFPDF Icon
Price for FCB099N65S3

Specification of FCB099N65S3

Status
Not For New Designs
Series
SuperFET® III
Package
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi,Flip Electronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
99mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4.5V @ 740A
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2480 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK-3 (TO-263-3)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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