FCH040N65S3-F155

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Overview of FCH040N65S3-F155

Part NumberFCH040N65S3-F155
Manufactureronsemi
DescriptionMOSFET N-CH 650V 65A TO247-3
DatasheetsDownload FCH040N65S3-F155 Datasheet PDFPDF Icon
Price for FCH040N65S3-F155

Specification of FCH040N65S3-F155

Status
Not For New Designs
Series
SuperFET® III
Package
Bulk,Tube
Supplier
Rochester Electronics, LLC,onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 6.5mA
Gate Charge (Qg) (Max) @ Vgs
136 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
4740 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
417W (Tc)
Operating Temperature
-55C ~ 150C
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3

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