FCH150N65F-F155

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Overview of FCH150N65F-F155

Part NumberFCH150N65F-F155
ManufacturerFairchild Semiconductor
DescriptionPOWER FIELD-EFFECT TRANSISTOR, N
DatasheetsDownload FCH150N65F-F155 Datasheet PDFPDF Icon
Price for FCH150N65F-F155

Specification of FCH150N65F-F155

Status
Active
Series
SuperFET® II
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
5V @ 2.4mA
Gate Charge (Qg) (Max) @ Vgs
94 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3737 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
298W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 Long Leads
Package / Case
TO-247-3

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