FCI25N60N-F102

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Overview of FCI25N60N-F102

Part NumberFCI25N60N-F102
ManufacturerFairchild Semiconductor
DescriptionMOSFET N-CH 600V 25A I2PAK
DatasheetsDownload FCI25N60N-F102 Datasheet PDFPDF Icon
Price for FCI25N60N-F102

Specification of FCI25N60N-F102

Status
Active
Series
SupreMOS™
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
3352 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
216W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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