FCP165N65S3R0

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Overview of FCP165N65S3R0

Part NumberFCP165N65S3R0
Manufactureronsemi
DescriptionMOSFET N-CH 650V 19A TO220-3
DatasheetsDownload FCP165N65S3R0 Datasheet PDFPDF Icon
Price for FCP165N65S3R0

Specification of FCP165N65S3R0

Status
Not For New Designs
Series
SuperFET® III
Package
Bulk,Tube
Supplier
Rochester Electronics, LLC,onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
154W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3

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