FCP9N60N-F102

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Overview of FCP9N60N-F102

Part NumberFCP9N60N-F102
Manufactureronsemi
DescriptionMOSFET N-CHANNEL 600V 9A TO220F
Price for FCP9N60N-F102

Specification of FCP9N60N-F102

Status
Obsolete
Package
Tube,Tube,Tube
Supplier
Flip Electronics,onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
385mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1240 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83.3W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack

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