FCPF11N60NT

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Overview of FCPF11N60NT

Part NumberFCPF11N60NT
Manufactureronsemi
DescriptionMOSFET N-CH 600V 10.8A TO220F
DatasheetsDownload FCPF11N60NT Datasheet PDFPDF Icon
Price for FCPF11N60NT

Specification of FCPF11N60NT

Status
Obsolete
Series
SuperMOS™
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
299mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
35.6 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1505 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
32.1W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack

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