FCPF850N80Z

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Overview of FCPF850N80Z

Part NumberFCPF850N80Z
ManufacturerFairchild Semiconductor
DescriptionPOWER FIELD-EFFECT TRANSISTOR, N
DatasheetsDownload FCPF850N80Z Datasheet PDFPDF Icon
Price for FCPF850N80Z

Specification of FCPF850N80Z

Status
Active
Series
SuperFET® II
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 600A
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1315 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
28.4W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F
Package / Case
TO-220-3 Full Pack

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