FDB16AN08A0

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Overview of FDB16AN08A0

Part NumberFDB16AN08A0
ManufacturerFairchild Semiconductor
DescriptionMOSFET N-CH 75V 9A/58A D2PAK
DatasheetsDownload FDB16AN08A0 Datasheet PDFPDF Icon
Price for FDB16AN08A0

Specification of FDB16AN08A0

Status
Active
Series
PowerTrench®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25C
9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
16mOhm @ 58A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1857 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
135W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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