FDB6670AS

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Overview of FDB6670AS

Part NumberFDB6670AS
ManufacturerFairchild Semiconductor
DescriptionMOSFET N-CH 30V 62A TO263AB
DatasheetsDownload FDB6670AS Datasheet PDFPDF Icon
Price for FDB6670AS

Specification of FDB6670AS

Status
Obsolete
Series
PowerTrench®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
62A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 15 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1570 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK (TO-263)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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