FDD18N20LZ

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Overview of FDD18N20LZ

Part NumberFDD18N20LZ
Manufactureronsemi
DescriptionMOSFET N-CH 200V 16A DPAK
DatasheetsDownload FDD18N20LZ Datasheet PDFPDF Icon
Price for FDD18N20LZ

Specification of FDD18N20LZ

Status
Active
Series
UniFET™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
125mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1575 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
89W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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