FDD3510H

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Overview of FDD3510H

Part NumberFDD3510H
Manufactureronsemi
DescriptionMOSFET N/P-CH 80V 4.3/2.8A TO252
DatasheetsDownload FDD3510H Datasheet PDFPDF Icon
Price for FDD3510H

Specification of FDD3510H

Status
Obsolete
Series
PowerTrench®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel, Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25C
4.3A, 2.8A
Rds On (Max) @ Id, Vgs
80mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 40V
Power - Max
1.3W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package
TO-252 (DPAK)

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