FDD6680S

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Overview of FDD6680S

Part NumberFDD6680S
ManufacturerFairchild Semiconductor
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload FDD6680S Datasheet PDFPDF Icon
Price for FDD6680S

Specification of FDD6680S

Status
Active
Series
PowerTrench®
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2010 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252, (D-Pak)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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