FDD8N50NZTM

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Overview of FDD8N50NZTM

Part NumberFDD8N50NZTM
Manufactureronsemi
DescriptionMOSFET N-CH 500V 6.5A DPAK
DatasheetsDownload FDD8N50NZTM Datasheet PDFPDF Icon
Price for FDD8N50NZTM

Specification of FDD8N50NZTM

Status
Obsolete
Series
UniFET-II™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 3.25A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
25V
Input Capacitance (Ciss) (Max) @ Vds
735 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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