FDG6304P-F169

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Overview of FDG6304P-F169

Part NumberFDG6304P-F169
Manufactureronsemi
DescriptionINTEGRATED CIRCUIT
DatasheetsDownload FDG6304P-F169 Datasheet PDFPDF Icon
Price for FDG6304P-F169

Specification of FDG6304P-F169

Status
Obsolete
Package
Bulk
Supplier
onsemi
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25C
410mA (Ta)
Rds On (Max) @ Id, Vgs
1.1Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
62pF @ 10V
Power - Max
300mW
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-70-6

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