FDL100N50F

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Overview of FDL100N50F

Part NumberFDL100N50F
Manufactureronsemi
DescriptionMOSFET N-CH 500V 100A TO264-3
DatasheetsDownload FDL100N50F Datasheet PDFPDF Icon
Price for FDL100N50F

Specification of FDL100N50F

Status
Active
Series
UniFET™
Package
Tube
Supplier
onsemi
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
55mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
238 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
12000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2500W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264-3
Package / Case
TO-264-3, TO-264AA

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